features ? excellent h fe linearity ? complementary t o kt a2015 applications ? general purpose switching m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 35 v v ceo collector - emitter voltage 30 v v ebo emitter - base voltage 5 v i c collector current 500 m a p c collector power dissipation 100 m w r ja thermal resistance from j u nction to a mbient 1250 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 0 0 a , i e =0 35 v collector - emitter breakdown voltage v (br) c e o i c = 1 ma, i b =0 30 v emitter - base breakdown voltage v (br)eb o i e = 1 0 0 a , i c =0 5 v collector cut - off current i cbo v cb = 35 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 5 v, i c =0 0.1 a h fe(1) v ce = 1 v, i c = 100 m a 70 240 dc current gain h fe(2) v ce = 6 v, i c = 400m a 25 collector - emitter saturation voltage v ce(sat) i c = 10 0 m a, i b = 1 0 ma 0.25 v base - emitter voltage v b e v ce = 1 v, i c = 100 m a 1 v transition frequency f t v c b = 6 v,i c = 20 ma , 300 mhz collector output capacitance c ob v cb = 6 v, i e =0, f=1mhz 7 pf classification of h fe(1) , h fe(2) rank o y rang h fe ( 1 ) 70 C 140 120 C 240 h fe ( 2 ) 25 min 40 min marking w o w y so t C 3 23 1. base 2. emitter 3. coll ector KTC4076 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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